parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 200 i c @ t c = 100c continuous collector current 100 a i cm pulsed collector current 400 i lm clamped inductive load current 400 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 160 mj v isol rms isolation voltage, any terminal to case, t=1 min 2500 p d @ t c = 25c maximum power dissipation 500 p d @ t c = 100c maximum power dissipation 200 t j operating junction -55 to + 150 t stg storage temperature range -55 to + 150 mounting torque, 6-32 or m3 screw 12 lbf in(1.3nm) parameter typ. max. units r jc junction-to-case ??? 0.25 r cs case-to-sink, flat, greased surface 0.05 ??? wt weight of module 30 ??? gm ga200sa60u e c g n-channel features ultrafast: optimized for minimum saturation voltage and operating frequencies up to 40 khz in hard switching, > 200 khz in resonant mode very low conduction and switching losses fully isolate package ( 2,500 volt ac/rms) very low internal inductance ( 5 nh typ.) industry standard outline designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating lower overall losses available at frequencies 20khz easy to assemble and parallel direct mounting to heatsink lower emi, requires less snubbing plug-in compatible with other sot-227 packages benefits v ces = 600v v ce(on) typ. = 1.60v @v ge = 15v, i c = 100a thermal resistance absolute maximum ratings w 4/24/2000 c v c/w sot-227 insulated gate bipolar transistor ultra-fast tm speed igbt www.irf.com 1
ga200sa60u 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ?? vv ge = 0v, i c = 1.0a dv (br)ces /dt j temperature coeff. of breakdown voltage ? 0.38 ? v/ cv ge = 0v, i c = 10 ma ? 1.60 1.9 i c = 100a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.92 ? i c = 200a see fig.2, 5 ? 1.54 ? i c = 100a , t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/ cv ce = v ge , i c = 2.0 ma g fe forward transconductance 79 ? sv ce = 100v, i c = 100a ?? 1.0 v ge = 0v, v ce = 600v ?? 10 v ge = 0v, v ce = 600v, t j = 150 c i ges gate-to-emitter leakage current ?? 250 na v ge = 20v parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 770 1200 i c = 100a q ge gate - emitter charge (turn-on) ? 100 150 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 260 380 v ge = 15v t d(on) turn-on delay time ? 54 ? t r rise time ? 79 ? t j = 25 c t d(off) turn-off delay time ? 130 200 i c = 100a, v cc = 480v t f fall time ? 300 450 v ge = 15v, r g = 2.0 ? e on turn-on switching loss ? 0.98 ? energy losses include "tail" e off turn-off switching loss ? 3.48 ? mj see fig. 9, 10, 14 e ts total switching loss ? 4.46 7.6 t d(on) turn-on delay time ? 56 ? t j = 150 c, t r rise time ? 75 ? i c = 100a, v cc = 480v t d(off) turn-off delay time ? 160 ? v ge = 15v, r g = 2.0 ? t f fall time ? 460 ? energy losses include "tail" e ts total switching loss ? 7.24 ? mj see fig. 10, 11, 14 l e internal emitter inductance ? 5.0 ? nh measured 5mm from package c ies input capacitance ? 16500 ? v ge = 0v c oes output capacitance ? 1000 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 200 ?? = 1.0mhz pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 2.0 ? , (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature. electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v ma switching characteristics @ t j = 25c (unless otherwise specified) ns ns
ga200sa60u www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics load current ( a ) 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 10 100 1000 5.0 6.0 7.0 8.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 25v 20 s pulse width ce t = 25 c j t = 150 c j 5s pulse width 0 40 80 120 160 200 0.1 1 10 100 f, frequenc y (khz) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125 c t = 90 c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 140w
ga200sa60u 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 400 c i = a 200 c i = a 100 c 25 50 75 100 125 150 0 50 100 150 200 t , case temperature ( c) maximum dc collector current(a) c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
ga200sa60u www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 400 c i = a 200 c i = a 100 c 0 10 20 30 40 50 60 0 10 20 30 40 50 60 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 200a cc ge j c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 1 10 100 0 5000 10000 15000 20000 25000 30000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 2.0 ? i c = 350 a r g , gate resistance ( ?) 0 200 400 600 800 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 110a cc c
ga200sa60u 6 www.irf.com 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 0 100 200 300 400 0 10 20 30 40 50 60 i , collector current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa 2.0 ?
ga200sa60u www.irf.com 7 480v 4 x i c @ 25 c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
ga200sa60u 8 www.irf.com 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 ) 4x 15.00 ( .590 ) r full 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -c- 0.25 ( .010 ) m c a m b m 25.70 ( 1.012 ) 25.20 ( .992 ) -b - 6.25 ( .246 ) c h am fe r 2.00 ( .079 ) x 457 -a- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) 4 1 3 2 lead assigments igbt e c g e s d g s hexfet a1 k2 k1 a2 3 2 4 1 3 2 4 1 hexfred e sot-227 package details dimensions are shown in millimeters ( inches ) e c igbt g tube quantities per tube is 10 m4 srew and washer included ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 4/00
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